vti_encoding:SR|utf8-nl vti_timelastmodified:TR|24 Jun 2013 20:45:40 -0000 vti_extenderversion:SR|12.0.0.0 vti_author:SR|SLMROBOT-87C0EC\\Sylvester vti_modifiedby:SR|Slim-PC\\SlimSly vti_timecreated:TR|23 Apr 2013 08:55:05 -0000 vti_title:SR|Analysis of Carrier Generation by Photon Absorption in Semiconductor Silicon vti_backlinkinfo:VX| vti_cacheddtm:TX|24 Jun 2013 20:45:40 -0000 vti_filesize:IR|11214 vti_cachedtitle:SR|Analysis of Carrier Generation by Photon Absorption in Semiconductor Silicon vti_cachedbodystyle:SR| vti_cachedlinkinfo:VX|H|favicon.ico Q|default.css Q|headerpicture.css S|images/sjp_logo.jpg A|search.php H|http://www.sjpub.org H|http://www.sjpub.org/journals.html H|http://www.sjpub.org/sjp.html H|http://www.sjpub.org/submit.html H|http://www.sjpub.org/sjeeditorial.html H|http://www.sjpub.org/aboutus.html H|http://www.sjpub.org/contactus.html H|http://creativecommons.org/licenses/by/3.0/ H|http://www.sjpub.org/sjp/sjp-133.pdf H|http://www.sjpub.org/sjp.html D|clsid:D27CDB6E-AE6D-11cf-96B8-444553540000 D|http://fpdownload.macromedia.com/pub/shockwave/cabs/flash/swflash.cab S|Journal-Cover.swf S|Journal-Cover.swf H|http://www.sjpub.org/sje-index.html H|http://www.sjpub.org/sje-bibliographic.html H|http://www.sjpub.org/sjp-aim.html H|http://www.sjpub.org/sjp.html H|http://www.sjpub.org/sjpeditorial.html H|http://www.sjpub.org/contactus.html H|http://www.sjpub.org/publishwithus.html H|http://www.sjpub.org/authorguide.html H|http://www.sjpub.org/submit.html H|http://www.sjpub.org/authorfaq.html H|http://www.sjpub.org/joineditors.html H|http://www.sjpub.org/joinreviewers.html H|http://www.sjpub.org/sitemap.html vti_cachedsvcrellinks:VX|NHUS|sjp/abstract/favicon.ico FQUS|sjp/abstract/default.css FQUS|sjp/abstract/headerpicture.css FSUS|sjp/abstract/images/sjp_logo.jpg NAUS|sjp/abstract/search.php NHHS|http://www.sjpub.org NHHS|http://www.sjpub.org/journals.html NHHS|http://www.sjpub.org/sjp.html NHHS|http://www.sjpub.org/submit.html NHHS|http://www.sjpub.org/sjeeditorial.html NHHS|http://www.sjpub.org/aboutus.html NHHS|http://www.sjpub.org/contactus.html NHHS|http://creativecommons.org/licenses/by/3.0/ NHHS|http://www.sjpub.org/sjp/sjp-133.pdf NHHS|http://www.sjpub.org/sjp.html NDUS|clsid:D27CDB6E-AE6D-11cf-96B8-444553540000 NDHS|http://fpdownload.macromedia.com/pub/shockwave/cabs/flash/swflash.cab FSUS|sjp/abstract/Journal-Cover.swf FSUS|sjp/abstract/Journal-Cover.swf NHHS|http://www.sjpub.org/sje-index.html NHHS|http://www.sjpub.org/sje-bibliographic.html NHHS|http://www.sjpub.org/sjp-aim.html NHHS|http://www.sjpub.org/sjp.html NHHS|http://www.sjpub.org/sjpeditorial.html NHHS|http://www.sjpub.org/contactus.html NHHS|http://www.sjpub.org/publishwithus.html NHHS|http://www.sjpub.org/authorguide.html NHHS|http://www.sjpub.org/submit.html NHHS|http://www.sjpub.org/authorfaq.html NHHS|http://www.sjpub.org/joineditors.html NHHS|http://www.sjpub.org/joinreviewers.html NHHS|http://www.sjpub.org/sitemap.html vti_cachedneedsrewrite:BR|false vti_cachedhasbots:BR|false vti_cachedhastheme:BR|false vti_cachedhasborder:BR|false vti_metatags:VR|HTTP-EQUIV=Content-Type text/html;\\ charset=iso-8859-1 citation_author Masbah\\ R.T.\\ Siregar citation_author Lamhot\\ Hutagalung\\ citation_title Analysis\\ of\\ Carrier\\ Generation\\ by\\ Photon\\ Absorption\\ in\\ Semiconductor\\ Silicon citation_pdf_url http://www.sjpub.org/sjp/sjp-133.pdf citation_year 2012 citation_online_date 2012 citation_journal_title Science\\ Journal\\ of\\ Physics citation_abstract Conventionally,\\ silicon\\ semiconductors\\ usually\\ used\\ as\\ a\\ sensor\\ or\\ photovoltaic\\ which\\ based\\ on\\ principles\\ of\\ generation\\ of\\ carrier\\ by\\ absorption\\ of\\ photon.\\ These\\ carrier\\ produce\\ in\\ the\\ form\\ of\\ electron\\ in\\ conduction\\ band\\ and\\ hole\\ in\\ valence\\ band\\ by\\ excite\\ of\\ electron\\ from\\ valence\\ band\\ to\\ conduction\\ by\\ absorption\\ of\\ photon\\ energy.\\ This\\ photon\\ absorption\\ will\\ determine\\ the\\ efficiency\\ of\\ the\\ sensor\\ or\\ photovoltaic.\\ In\\ this\\ paper,\\ the\\ analysis\\ of\\ a\\ single\\ crystalline\\ <100>\\ type\\ n\\ with\\ resistivity\\ of\\ 10\\ ohm\\ cm\\ by\\ radiation\\ of\\ photon\\ energy\\ 0.8\\ -\\ 1.8\\ eV.\\ By\\ assuming\\ that\\ the\\ carrier\\ was\\ generated\\ only\\ by\\ transition\\ electron\\ to\\ conduction\\ band\\ and\\ leave\\ the\\ hole\\ in\\ valence\\ band,\\ the\\ rate\\ carrier\\ generation\\ per\\ unit\\ power\\ as\\ a\\ function\\ of\\ photon\\ energy\\ calculated\\ by\\ using\\ mathematical\\ model\\ (Zeghbock,\\ B,\\ 2011)\\ application.\\ The\\ the\\ rate\\ carrier\\ generation\\ per\\ unit\\ power\\ in\\ room\\ temperature\\ was\\ created\\ from\\ range\\ of\\ 3.5\\ to\\ 6.5\\ 1022\\ cm-3\\ S-1\\ W-1\\ .\\ The\\ analysis\\ also\\ developed\\ for\\ photon\\ energy\\ of\\ 1.17,\\ 1,6\\ and\\ 1.8\\ as\\ a\\ function\\ temperature\\ in\\ the\\ range\\ of\\ 30\\ -\\ 300oC\\ .\\ The\\ results\\ will\\ given\\ the\\ rate\\ carrier\\ generation\\ per\\ unit\\ power\\ as\\ function\\ of\\ temperature. dc.rights http://creativecommons.org/licenses/by/3.0/ citation_volume 2012 citation_publisher Science\\ Journal\\ Publication citation_issn 2276-6367 citation_abstract_html_url http://www.sjpub.org/sjp/abstract/sjp-133.html vti_charset:SR|iso-8859-1